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| LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBTA70LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318-08, STYLE 6 Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V V CEO EBO Value -40 -4.0 -100 Unit Vdc Vdc mAdc SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING MMBTA70LT1 = M2C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -1.0 mAdc, I B = 0) Emitter-Base Breakdown Voltage (I E = -100 Adc, I C = 0) Collector Cutoff Current ( V CB = -30Vdc, I E = 0) V V (BR)CEO -40 -4.0 -- -- Vdc Vdc nAdc (BR)EBO I CBO -- hFE VCE(sat) 40 -- -100 400 -0.25 ON CHARACTERISTICS DC Current Gain(I C = -5.0mAdc, V CE = -10 Vdc) Collector-Emitter Saturation Voltage(I C = -10mAdc, I B = -1.0 mAdc) -- Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(I C = -5.0mAdc, V CE= -10Vdc, f = 100MHz) Output Capacitance(V CB = -10Vdc, I E = 0, f = 1.0 MHz) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. fT C obo 125 -- -- 4.0 MHz pF M31-1/5 LESHAN RADIO COMPANY, LTD. MMBTA70LT1 TYPICAL NOISE CHARACTERISTICS (V CE = -5.0 Vdc, T A = 25C) 10 10 e n , NOISE VOLTAGE (nV) 7.0 I n , NOISE CURRENT (pA) BANDWIDTH = 1.0 Hz RS~0 ~ I C = 10 A 7.0 5.0 3.0 2.0 BANDWIDTH = 1.0 Hz RS~ ~ I C = 1.0 mA 5.0 30 A 3.0 300 A 1.0 0.7 0.5 0.3 0.2 100 A 1.0 mA 300 A 100 A 30 A 10 A 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 0.1 10 f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (V CE = -5.0 Vdc, T A = 25C) R S , SOURCE RESISTANCE (OHMS) R S , SOURCE RESISTANCE (OHMS) 1.0M 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 1.0M 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0k 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0k I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. Narrow Band, 100 Hz R S , SOURCE RESISTANCE (OHMS) 1.0M 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz Noise Figure is Defined as: NF = 20 log 10 ( ---------------) 4KTR S e n 2 +4KTRS +I n2 R S2 1/ 2 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0k e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10 -23 j/K) T = Temperature of the Source Resistance (K) R s = Source Resistance (Ohms) I C , COLLECTOR CURRENT (mA) Figure 5. Wideband 8 M31-2/5 LESHAN RADIO COMPANY, LTD. MMBTA70LT1 TYPICAL STATIC CHARACTERISTICS 400 T J = +125C h FE, DC CURRENT GAIN +25C 200 -55C 100 80 60 V CE = 1.0V V CE = 1 0V 40 0.0030.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) Figure 6. DC Current Gain V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 100 T A = 25C I C , COLLECTOR CURRENT (mA) T A = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE <2.0% I B = 400 A 350 A 250 A 200 A 150 A 0.8 I C = 1.0 mA 0.6 10 mA 50 mA 100 mA 300A 60 0.4 40 100 A 50 A 0.2 20 0 0.002 0 0 5.0 10 15 20 25 30 35 40 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 I C , COLLECTOR CURRENT (mA) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Collector Saturation Region Figure 8. Collector Characteristics V, TEMPERATURE COEFFICIENTS (mV/ C) 1.4 1.6 T J = 25C 1.2 *APPLIES for I C /I B < h FE /2 0.8 V , VOLTAGE (VOLTS) 1.0 0.8 * VC for V CE(sat) 0 25C to 125C -55C to 25C V BE(sat) @ I C /I B = 10 0.6 V BE(on) @ V CE = 1.0 V 0.4 0.2 -0.8 25C to 125C -1.6 V CE(sat) @ I C /I B = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VB for V BE -2.4 0.1 -55C to 25C 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. "On" Voltages Figure 10. Temperature Coefficients M31-3/5 LESHAN RADIO COMPANY, LTD. MMBTA70LT1 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 V CC = 3.0 V I C /I B = 10 T J = 25C 1000 700 500 300 V CC = -3.0 V ts I C /I B = 10 I B1 = I B2 T J = 25C t, TIME (ns) 70 50 30 20 t, TIME (ns) 100 200 100 70 50 30 20 10 -1.0 tr t d @ V BE(off) = 0.5 V tf 10 7.0 5.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Turn-On Time f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) 500 10 Figure 12. Turn-Off Time T J = 25C 300 T J = 25C V CE = 20 V 7.0 C ib C, CAPACITANCE (pF) 5.0 V 200 5.0 3.0 100 2.0 C ob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product 20 200 Figure 14. Capacitance h ie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 h fe ~ 200 ~ @ I C = -1.0 mA f = 1.0 kHz T A = 25C h oe , OUTPUT ADMITTANCE ( mhos) V CE = -10 Vdc V CE = 10 Vdc 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f = 1.0 kHz T A = 25C h fe ~ 200 ~ @ I C = 1.0 mA 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 15. Input Impedance Figure 16. Output Admittance M31-4/5 LESHAN RADIO COMPANY, LTD. MMBTA70LT1 r (t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.1 0.07 0.05 0.05 P (pk) 0.02 FIGURE 19 DUTY CYCLE, D = t 1 /t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN-569) 0.03 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 t1 0.01 SINGLE PULSE t2 Z JA(t) = r(t) * R JA T J(pk) - T A = P (pk) Z JA(t) 1.0k 2.0k 5.0k 10k 20k 50k 100k 500 t, TIME (ms) Figure 17. Thermal Response 10 4 I C , COLLECTOR CURRENT (nA) V CC = 30 V 10 3 DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model I CEO as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was I CBO AND I CEX @ V BE(off) = 3.0 V calculated for various duty cycles. To find Z JA(t) , multiply the value obtained from Figure 17 by the steady state value R JA . Example: Dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 10 2 10 1 10 0 10 -1 10 2 -40 -20 0 20 40 60 80 100 120 140 160 T J , JUNCTION TEMPERATURE (C) The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. Figure 18. Typical Collector Leakage Current M31-5/5 |
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